Quantum-Well Effect of Magnetic Tunnel Junctions with Ultrathin Fe(100) Electrodes.

Magnetic Tunnel Junctions With Co:TiO Magnetic Semiconductor Electrodes

Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO magnetic semiconductor. The Co:TiO layers (0 to 1 nm thick) are inserted at the SrTiO Co interface in La Sr MnO SrTiO Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO , while the junction resista...

Ferroelectric tunnel junctions with graphene electrodes.

Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary condition...

Magnetic tunnel junctions using Co/Ni multilayer electrodes with perpendicular magnetic anisotropy

First-principles theory of quantum well resonance in double barrier magnetic tunnel junctions.

Quantum well (QW) resonances in Fe(001)/MgO/Fe/MgO/Fe double barrier magnetic tunnel junctions are calculated from first principles. By including the Coulomb blockade energy due to the finite size islands of the middle Fe film, we confirm that the oscillatory differential resistance observed in a recent experiment [T. Nozaki, Phys. Rev. Lett. 96, 027208 (2006)10.1103/PhysRevLett.96.027208] orig...

Magnetic Tunnel Junctions

Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...